PART |
Description |
Maker |
HAT1026R-EL-E HAT1026R |
7 A, 30 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
2SK2347 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
|
SANYO
|
BF998R |
From old datasheet system Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
INK0002AX08 INK0002AC1 INK0002AU1 INK0002AM1 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
CMRDM3590 |
SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 160 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET ROHS COMPLIANT PACKAGE-6
|
Central Semiconductor Corp Central Semiconductor, Corp.
|
RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching 3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
RJM0306JSP-00-J0 RJM0306JSP |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
CPH6312 |
P-Channel Silicon MOSFET High-Speed Switching Applications
|
Sanyo Semicon Device Sanyo Electric Co.,Ltd.
|
RJL6013DPP RJL6013DPP-00-T2 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|